| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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210 pcs
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210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Alliance Memory, Inc. AS4C512M8D3L-12BIN is a 4 Gigabit Synchronous DRAM (SDRAM) component utilizing DDR3L technology. It is organized as 512M x 8 bits and operates with a clock frequency of 800 MHz, providing high-speed data transfer rates.
This component features a voltage supply range of 1.283V to 1.45V and supports an industrial operating temperature range of -40°C to 95°C. The access time is 20 ns, and the write cycle time is 15 ns.
Packaged in a compact 78-ball FBGA (Fine Ball Grid Array) measuring 9mm x 10.5mm, it is designed for surface mounting. This memory chip is suitable for applications requiring high density and low-voltage operation, such as consumer electronics, networking equipment, and industrial computers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the AS4C512M8D3L-12BIN is 1.35V, and it is backward compatible to 1.5V ±0.075V.
This DRAM has an operating temperature range of -40°C to 95°C (TC).
The AS4C512M8D3L-12BIN is supplied in a 78-ball FBGA package.
The clock frequency for the AS4C512M8D3L-12BIN is 800 MHz.
The memory organization is 512M x 8.