| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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392 pcs
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392 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AS4C4M32S-6BINTR from Alliance Memory is a high-speed CMOS synchronous DRAM with a capacity of 128 Mbits. It is internally configured as a 4M x 32 DRAM, featuring a synchronous interface where all signals are registered on the positive edge of the clock signal.
Key electrical specifications include a fast clock rate of 166 MHz and an access time of 5.4 ns from the clock. The device operates from a single 3.3V power supply and supports programmable CAS Latency of 2 or 3, with burst lengths of 1, 2, 4, 8, or full page. It also features individual byte control via DQM0-3 and supports both Auto Refresh and Self Refresh functions.
This SDRAM is housed in a 90-ball TFBGA package, measuring 8 x 13 mm. It is designed for surface mounting and operates within an industrial temperature range of -40°C to 85°C. The package is Pb and Halogen Free, aligning with environmental standards.
With its high memory bandwidth capabilities, the AS4C4M32S-6BINTR is well-suited for applications requiring efficient data access and processing.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS4C4M32S-6BINTR has a memory size of 128Mbit.
The clock frequency for the AS4C4M32S-6BINTR is 166 MHz.
The access time from clock is 5.4 ns.
The operating voltage range is 3V to 3.6V, with a nominal voltage of 3.3V.
The operating temperature range is -40°C to 85°C.
It is supplied in a 90-ball TFBGA package.
Yes, this component is RoHS3 Compliant.