| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The AS4C4M32S-6BIN from Alliance Memory is a high-speed CMOS synchronous DRAM with a capacity of 128Mbits. It operates at clock rates up to 166MHz with a fast access time of 5.4ns from the clock. This SDRAM is internally configured as a quad 1M x 32 DRAM with four internal banks, supporting programmable burst lengths and CAS latencies.
Designed for applications requiring high memory bandwidth, the AS4C4M32S-6BIN operates from a single 3.3V ±0.3V power supply and uses an LVTTL interface. It is housed in a compact 90-ball TFBGA package measuring 8 x 13 x 1.2mm, suitable for surface mount applications. The device supports both Auto Refresh and Self Refresh functions and operates within an industrial temperature range of -40°C to 85°C.
This component is Pb and Halogen Free, aligning with environmental compliance standards. Its synchronous operation and pipelined architecture make it well-suited for various memory-intensive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS4C4M32S-6BIN has a capacity of 128Mbit.
The operating voltage is 3.3V ±0.3V.
It uses a 90-ball TFBGA package measuring 8 x 13 x 1.2mm.
The industrial temperature range is -40°C to 85°C.
The maximum clock frequency is 166MHz.
CAS latency of 2 or 3 is supported.