AS4C4M16SA-6TCNTR

The Alliance Memory AS4C4M16SA-6TCNTR is a high-speed CMOS synchronous DRAM (SDRAM) with a density of 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM, featuring a synchronous interface where all signals are registered on the positive edge of the clock signal.

Key electrical specifications include a fast clock rate of up to 166 MHz for the -6 speed grade and 143 MHz for the -7 speed grade, with a clock cycle time as low as 6 ns. The access time from CLK is a maximum of 5.4 ns. It operates from a single +3.3V ± 0.3V power supply and uses an LVTTL interface.

This SDRAM supports programmable burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst types. It also includes programmable mode registers for CAS Latency (2 or 3) and an optional drive strength control. The device offers Auto Refresh and Self Refresh capabilities, with 4096 refresh cycles required every 64ms.

Available in both a 54-pin 400 mil plastic TSOP II package and a 54-ball 8.0 x 8.0 x 1.2mm FBGA package, the AS4C4M16SA-6TCNTR is suitable for applications requiring high memory bandwidth. It operates within a commercial temperature range of 0~70°C or an industrial range of -40~85°C.