| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130,000 pcs
|
130000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| Interface | |
| Lead Style | |
| Memory Size | |
| SVHC Present | |
| Tape & Reel |
The AS4C4M16SA-6BINTR from Alliance Memory is a high-speed CMOS synchronous DRAM with a density of 64Mb. It is internally configured as 4 Banks of 1M word x 16 DRAM, providing a 4M x 16 organization.
This SDRAM features a fast clock rate of up to 166 MHz for the -6 speed grade and 143 MHz for the -7 speed grade, with a fast access time from clock of 5.4 ns. It operates from a single +3.3V ± 0.3V power supply and uses an LVTTL interface. Programmable features include CAS Latency (2 or 3), Burst Length (1, 2, 4, 8, or full page), and Burst Type (Sequential or Interleaved).
Available in a 54-ball FBGA package, this device is suitable for applications requiring high memory bandwidth. It supports Auto Refresh and Self Refresh functions and operates within an industrial temperature range of -40°C to 85°C.
The AS4C4M16SA-6BINTR is well-suited for high-performance PC applications and other systems demanding efficient memory access.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 64 megabits (8 megabytes).
It is organized as 4M words by 16 bits (4Mx16).
The maximum clock rate is 166 MHz for the -6 speed grade.
The supply voltage is 3.3V nominal.
The device is available in a 54-ball FBGA or 54-pin TSOP II package.
CAS latency is programmable to 2 or 3.
Burst lengths of 1, 2, 4, 8, or full page are supported.