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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AS4C32M8D1-5TCN is a high-speed DDR DRAM from Alliance Memory, Inc. This component offers a memory size of 256Mbit organized as 32M x 8, utilizing a parallel memory interface.
Key electrical specifications include a maximum clock frequency of 200 MHz, an access time of 700 ps, and a write cycle time of 15ns. The operating voltage range is between 2.3V and 2.7V. It supports programmable CAS Latency options of 2.5, 3, and 4, with programmable burst lengths of 2, 4, or 8.
This device is available in a 66-pin TSOP II package, designed for surface mount applications. The operating temperature range is 0°C to 70°C (TA). Features like automatic and controlled precharge command, power down mode, and auto refresh are included.
Alliance Memory provides this part with a RoHS3 compliant status, and it is rated MSL 1 Unlimited for moisture sensitivity.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range for the AS4C32M8D1-5TCN is 2.3V to 2.7V.
The AS4C32M8D1-5TCN is available in a 66-TSOP II package, also described as 66-TSSOP (0.400", 10.16mm Width).
The operating temperature range for the AS4C32M8D1-5TCN is 0°C to 70°C (TA).
The memory size of the AS4C32M8D1-5TCN is 256Mbit.
The clock frequency of the AS4C32M8D1-5TCN is 200 MHz.
The access time for the AS4C32M8D1-5TCN is 700 ps.
The memory organization of the AS4C32M8D1-5TCN is 32M x 8.