| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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126,000 pcs
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126000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
535 pcs
|
535 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Alliance AS4C16M16SA-6TINTR is a high-speed CMOS synchronous DRAM with a capacity of 256 Mbits. It is internally configured as 4 Banks of 4M word x 16-bit DRAM, offering a synchronous interface where all signals are registered on the positive edge of the clock signal.
Key electrical specifications include a fast clock rate of up to 166 MHz with a corresponding clock cycle time of 6 ns, and an access time from clock of 5 ns. The device operates from a single +3.3V ±0.3V power supply and utilizes an LVTTL interface. It supports programmable burst lengths and features auto and self-refresh capabilities.
This SDRAM is available in two package types: a 54-pin 400 mil plastic TSOP II and a 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package. Both are surface mountable. The part is suitable for applications requiring high memory bandwidth, particularly in high-performance PC applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS4C16M16SA-6TINTR has a capacity of 256Mbit.
The AS4C16M16SA-6TINTR supports a maximum clock rate of 166 MHz.
The access time from clock is a maximum of 5 ns for the 166 MHz version.
This SDRAM operates from a single +3.3V ±0.3V power supply.
It is available in a 54-pin TSOP II package and a 54-ball FBGA package.
Yes, the AS4C16M16SA-6TINTR is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.