| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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535 pcs
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535 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Alliance Memory, Inc. AS4C16M16SA-6TINTR is a high-speed CMOS synchronous DRAM with a capacity of 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM, featuring a synchronous interface where all signals are registered on the positive edge of the clock signal.
Key electrical specifications include a clock frequency of 166 MHz, an access time from clock of 5 ns, and an operating voltage range of 3V to 3.6V. The device supports programmable burst lengths and operates within an industrial temperature range of -40°C to 85°C.
This SDRAM is packaged in a 54-pin TSOP II (0.400", 10.16mm Width) and is designed for surface mounting. Its architecture is well-suited for applications requiring high memory bandwidth, particularly in high-performance PC applications.
The part is organized as 16M x 16 and utilizes a parallel DRAM interface. It also features auto refresh and self-refresh capabilities, along with a CKE power-down mode for power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.3V ±0.3V.
Commercial temperature range 0°C to 70°C and industrial temperature range -40°C to 85°C.
54-TSOP II surface mount package.
256 Mbit.
16M x 16.
166 MHz.