| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,620 pcs
|
3620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| Operating Temperature | |
| Power Dissipation | |
| Storage Temperature |
The AS1C512K16P-70BIN from Alliance Memory is an 8,388,608-bit Pseudo SRAM utilizing DRAM memory cells with refresh-free operation and low power consumption. Its interface is compatible with low-power asynchronous SRAM.
This device is organized as 524,288 words by 16 bits, offering a fast 70ns address access speed. It operates within a power supply voltage range of 2.6V to 3.3V, with separated I/O and core power supplies. Key features include three-state outputs, byte read/write control via UB# and LB#, and auto-TCSR for power saving.
The AS1C512K16P-70BIN is available in a 48-FPBGA package measuring 6.0x7.0 mm. It is designed for industrial operating temperatures ranging from -40°C to 85°C. The standby current is a maximum of 120µA, with operating currents of 5mA (ICC1 at 1MHz) and 25mA (ICC2 at fmax).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
512K x16.
70 ns.
2.6V to 3.3V.
48-FPBGA (6.0 x 7.0 mm).
-40°C to 85°C.
120 µA.
Yes, separated I/O power (VCCQ) and core power (VCC).