| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-23 21:33:16 |
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The Alliance Memory AS1C4M16PL-70BIN is a high-speed, CMOS pseudo-static random access memory device designed for low-power, portable applications. It features a 64Mbit DRAM core organized as 4 Meg x 16 bits, utilizing a multiplexed address/data bus to reduce signal count and increase bandwidth.
Key specifications include a 70 ns random access time and a maximum clock frequency of 133 MHz. The device supports both asynchronous and burst operations. Power consumption is optimized, with low operating currents and a deep power-down mode drawing minimal current.
This PSRAM IC is housed in a 49-FBGA package and is suitable for surface mounting. It operates within an industrial temperature range of -30°C to +85°C.
The AS1C4M16PL-70BIN is a variation of the industry-standard Flash control interface, making it suitable for seamless integration into systems using burst Flash buses. It incorporates on-chip temperature-compensated self-refresh (TCSR) and partial array refresh (PAR) for efficient operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS1C4M16PL-70BIN has a memory size of 64Mbit.
The access time for the AS1C4M16PL-70BIN is 70 ns.
The AS1C4M16PL-70BIN operates within a voltage range of 1.7V to 1.95V.
The operating temperature range for the AS1C4M16PL-70BIN is -30°C to +85°C (TC).
The AS1C4M16PL-70BIN is supplied in a 49-FBGA package, also referred to as 49-WFBGA.
The AS1C4M16PL-70BIN supports a maximum clock frequency of 133 MHz.