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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The APTGT35X120T3G from Microsemi Corporation is a high-performance IGBT module designed for specialized applications. This module features a maximum collector-emitter voltage (VCEO Max) of 1.2 kV and a continuous collector current of 55 A at 25°C, making it suitable for demanding power electronics tasks.
With a power dissipation rating of 208 W and a minimum operating temperature of -40°C, the APTGT35X120T3G is built for reliability in various environmental conditions, extending up to a maximum operating temperature of 100°C. The module utilizes Silicon (Si) technology and is configured for 3-phase operation.
Designed for chassis mounting, this IGBT module comes in the SP3-32 package and is supplied in tube packaging. Its robust construction and electrical characteristics make it a suitable component for power conversion and control systems where high voltage and current handling are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the APTGT35X120T3G is 1.2 kV.
The continuous collector current at 25°C is 55 A.
The power dissipation (Pd) for the APTGT35X120T3G is 208 W.
The operating temperature range is from -40°C to +100°C.
This IGBT module is designed for chassis mount.
The package/case code is SP3-32.