| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,808 pcs
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1808 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The APTC80AM75SCG is a dual N-Channel MOSFET from Microchip Technology configured as a half bridge. It is designed for high-voltage applications with a drain-to-source voltage rating of 800V and continuous drain current of 56A. The device features a low maximum on-resistance of 75mOhm at 28A and 10V gate drive, enabling efficient power switching.
Key electrical characteristics include a gate charge of 364nC at 10V and an input capacitance of 9015pF at 25V, which are important for gate drive design. The MOSFET can dissipate up to 568W and operates over a junction temperature range of -40°C to 150°C, making it suitable for demanding thermal environments.
The device is housed in a SP6 package and is designed for chassis mount installation, providing robust mechanical support and heat sinking. This component is well-suited for power conversion systems, motor drives, and other industrial applications requiring high voltage and current handling.
The drain-to-source voltage rating is 800V.
The device is in a SP6 package with chassis mount mounting type.
The junction temperature range is -40°C to 150°C.
It is listed as RoHS3 Compliant, but this is unverified low-confidence data.
The continuous drain current rating is 56A.
The maximum drain-to-source on-resistance is 75mOhm at 28A and 10V gate voltage.