| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Vgs(th) (Max) @ Id |
The Microsemi APTC60HM45T1G is a MOSFET Array featuring 4 N-Channel transistors configured in an H-Bridge. It offers a high drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 49A at 25°C. The maximum power dissipation is rated at 250W.
Key electrical characteristics include a maximum gate threshold voltage (VGS(th)) of 3.9V at 3mA and a maximum drain-source on-resistance (RDS(ON)) of 45 mOhm at 24.5A and 10V. Input capacitance (Ciss) is 7200pF at 25V, and gate charge (Qg) is 150nC at 10V.
This component operates within a temperature range of -40°C to 150°C (TJ). It is designed for chassis mounting and comes in a Bulk package with the SP1 case code. The device is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1 (Unlimited).
This MOSFET array is suitable for various power switching applications where high voltage and current handling are required, along with the benefits of an H-Bridge configuration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current (Id) at 25°C is 49A.
The maximum power dissipation is 250W.
The operating temperature range is -40°C to 150°C (TJ).
It is designed for chassis mounting.
The Moisture Sensitivity Level (MSL) is 1 (Unlimited).