| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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857 pcs
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857 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The APT94N65B2C3G is an N-Channel MOSFET from Microsemi Corporation designed for high-voltage, high-current switching applications. It features a drain-to-source voltage rating of 650V and a continuous drain current of 94A at case temperature. The device offers a low on-resistance of 35mOhm at 47A drain current and 10V gate drive, enabling efficient power conversion.
Key electrical characteristics include a maximum gate charge of 580nC at 10V and an input capacitance of 13940pF at 25V. The gate threshold voltage is 3.9V at 5.8mA, and the maximum gate-source voltage is ±20V. The MOSFET can dissipate up to 833W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The device is housed in a TO-247-3 Variant package with a T-MAX™ [B2] supplier device package and is through-hole mountable. This package is suitable for high-power designs requiring robust thermal performance.
650V.
TO-247-3 Variant with T-MAX™ [B2] supplier device package.
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
94A at case temperature.
35mOhm at 47A and 10V gate drive.
580nC at 10V gate-source voltage.