APT8015JVR
Microchip Technology
N-Channel MOSFET with 800V drain-source voltage and 44A continuous drain current. Housed in an ISOTOP (SOT-227) chassis mount package.
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2,254 pcs
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2254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vgs(th) (Max) @ Id |
The APT8015JVFR is an N-Channel MOSFET from Microchip Technology, designed for high-voltage power switching applications. It has a drain-to-source voltage rating of 800V and a continuous drain current of 44A at case temperature. The device features a maximum on-resistance of 150mOhm at a gate-to-source voltage of 10V and a test current of 500mA, along with a gate charge of 285nC at 10V. Its input capacitance is up to 17650pF at 25V drain-source voltage, and the maximum threshold voltage is 4V at 5mA drain current.
This MOSFET is offered in a SOT-227-4 (miniBLOC) package with an ISOTOP supplier device package, suitable for chassis mounting. The package is designed for power dissipation and easy mounting in industrial equipment. The device is RoHS3 compliant and REACH unaffected, though these compliance statuses are not independently verified.
Typical applications include high-voltage power conversion, motor drives, and inverters. The low on-resistance and high current capability make it suitable for efficient power handling in demanding environments.
| Qty | Low | High |
|---|---|---|
| 10+ | $85.15 | $85.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 800V.
It is available in a SOT-227-4 (miniBLOC) package with ISOTOP supplier device package, designed for chassis mounting.
The product is listed as RoHS3 compliant, but this compliance is not independently verified.
The maximum drain current is 44A at case temperature (Tc).
The maximum on-resistance is 150mOhm, tested at Id=500mA and Vgs=10V.
The gate charge is 285nC at Vgs=10V.
The maximum threshold voltage is 4V at Id=5mA.