| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT8011JLL is an N-Channel power MOSFET from Microchip Technology, designed for high-voltage switching applications. It features a drain-source voltage rating of 800V and a continuous drain current of 51A at case temperature. The device offers a maximum on-resistance of 110mOhm at 25.5A drain current and 10V gate-source voltage. Gate charge is 650nC maximum at 10V, and input capacitance is 9480pF at 25V drain-source. The MOSFET is housed in a SOT-227-4 miniBLOC package with ISOTOP® supplier device package, supporting chassis mount installation. This package is suitable for high-power modules requiring efficient thermal management. The device is RoHS3 compliant and has an MSL of 1 (unlimited). Typical applications include power supplies, motor drives, and inverters where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $92.42 | $92.42 |
| 100+ | $75.01 | $75.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
51A at case temperature.
110mOhm at 25.5A drain current and 10V gate-source voltage.
650nC maximum at 10V gate-source voltage.
9480pF at 25V drain-source voltage.
SOT-227-4 miniBLOC (ISOTOP) for chassis mount.
Yes, RoHS3 compliant (unverified).