| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
96 pcs
|
96 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Mounting Type | |
| Technology |
The APT77N60SC6 from Microsemi Corporation is an N-channel power MOSFET. It is designed to handle high voltages, supporting a drain-source voltage (Vds) of up to 800V. The continuous drain current (Id) is rated at 44A at a case temperature of 25°C.
This MOSFET features a low on-resistance (Rds(on)) of 150mOhm at 500mA and 10V gate-source voltage, which helps minimize conduction losses in high-current operations. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 5mA, and the gate charge (Qg) is 285nC maximum at 10V.
Packaged in an ISOTOP® (SOT-227-4, miniBLOC) chassis-mount configuration, the APT77N60SC6 offers enhanced thermal performance. Its input capacitance (Ciss) is 17650pF maximum at 25V. This component is suitable for high-voltage, high-power switching applications where robust performance and thermal management are critical.
The technology used is MOSFET (Metal Oxide). The part number APT77N60SC6 is associated with the POWER MOS V® series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the APT77N60SC6 is 800V.
The APT77N60SC6 has a continuous drain current (Id) rating of 44A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) for the APT77N60SC6 is 150mOhm when measured at 500mA drain current and 10V gate-source voltage.
The APT77N60SC6 is supplied in an ISOTOP® package, specifically SOT-227-4, miniBLOC, designed for chassis mounting.
The gate threshold voltage (Vgs(th)) for the APT77N60SC6 is a maximum of 4V at 5mA drain current.