| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| IGBT Type | |
| Input | |
| Input Capacitance (Cies) @ Vce | |
| Mounting Type | |
| NTC Thermistor | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The APT75GP120J is a single Punch-Through (PT) IGBT module manufactured by Microchip Technology. It is designed for high-power switching applications requiring robust voltage and current handling. The module features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 128 A, with a maximum power dissipation of 543 W. The collector-emitter saturation voltage is 3.9 V maximum at a gate-emitter voltage of 15 V and a collector current of 75 A. The input capacitance is 7.04 nF at a collector-emitter voltage of 25 V. It uses a standard gate input configuration.
The module is housed in an ISOTOP package (supplier device package ISOTOP®) and is designed for chassis mounting, facilitating effective heat sinking in power converter and motor drive systems. The operating junction temperature range is -55°C to 150°C. This module does not include an NTC thermistor. The product is intended for industrial power electronics applications where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $43.87 | $43.87 |
| 100+ | $35.60 | $35.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
128 A.
543 W.
3.9 V maximum at Vge=15V, Ic=75A.
7.04 nF at Vce=25V.
-55°C to 150°C (junction).
ISOTOP chassis mount.