| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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139 pcs
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139 pcs | On Request | 25 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
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| Voltage |
The APT66F60L from Microsemi Corporation is an N-Channel MOSFET with a 600V drain-source voltage rating. It offers a continuous drain current of 70A and a low drain-source on-resistance of 90 mOhms. The device operates within a temperature range of -55 C to +150 C.
This MOSFET is housed in a TO-264-3 package and supports through-hole mounting. Key electrical characteristics include a gate-source threshold voltage of 4V, a gate charge of 330 nC, and a gate-source voltage rating of 30V. It also specifies various switching times such as fall time, typical turn-off delay time, typical turn-on delay time, and rise time.
The APT66F60L is suitable for various power switching applications where high voltage and current handling are required. Its N-Channel enhancement mode operation and silicon technology make it a versatile component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 70A.
The drain-source on-resistance is 90 mOhms.
The operating temperature range is -55 C to +150 C.
The APT66F60L is available in a TO-264-3 package.
The gate-source threshold voltage is 4V.
The gate charge is 330 nC.
The power dissipation is 1.135 kW.