| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,654 pcs
|
3654 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The APT65GP60L2DQ2G is a single N-channel IGBT from Microchip Technology, designed for high-power switching applications. It features a PT (Punch-Through) IGBT structure, with a maximum collector-emitter breakdown voltage of 600V and a continuous collector current rating of 198A.
The device can dissipate up to 833W of power. It operates over a junction temperature range of -55°C to 150°C. The IGBT is specified with a standard gate drive input type and requires a gate charge of 210 nC. Switching characteristics include turn-on delay of 30ns and turn-off delay of 90ns, tested at 400V, 65A. The collector-emitter saturation voltage is 2.7V maximum at 15V gate voltage and 65A collector current.
The IGBT is housed in a TO-264-3 (TO-264AA) package, which is suitable for through-hole mounting. This package provides robust thermal and mechanical performance for high-power applications. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $20.70 | $20.70 |
| 100+ | $16.80 | $16.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-264-3 (TO-264AA) through-hole package.
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified).
198A.
833W.
210 nC.