APT60N60BCSG The APT60N60BCSG is an N-channel power MOSFET from Microchip Technology, designed for high voltage and current applications. It features a 600V drain-to-source voltage and a 60A continuous drain current.
Mfr Part #:

APT60N60BCSG

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The APT60N60BCSG is an N-channel power MOSFET from Microchip Technology, designed for high voltage and current applications. It features a 600V drain-to-source voltage and a 60A continuous drain current.
✓ Total Stock: 410 pcs
$ Price Range: $0.99

APT60N60BCSG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
410 pcs
410 pcs On Request 25 On Request On Request On Request On Request On Request

APT60N60BCSG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Mounting Type
Operating Temperature
Package / Case
Package Quantity
Technology

APT60N60BCSG Description

Short technical summary and product information.

The APT60N60BCSG is an N-channel power MOSFET manufactured by Microchip Technology. This component is engineered to handle demanding power applications, offering a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 60A at 25°C.

 

With a maximum power dissipation of 431W (Tc) and a low on-resistance of 45mΩ at 44A and 10V, the APT60N60BCSG is suitable for high-efficiency power switching and management tasks. Its metal-oxide technology ensures robust performance.

 

The device is housed in a standard TO-247-3 package, utilizing through-hole mounting for enhanced thermal management. The operating temperature range is from -55°C to +150°C (TJ), making it resilient in various environmental conditions.

 

Key electrical parameters include a gate threshold voltage (Vgs(th)) of 3.9V @ 3mA, a gate charge (Qg) of 190nC @ 10V, and a maximum gate-source voltage (Vgs) of ±30V. Input capacitance (Ciss) is rated at 7200pF @ 25V.

APT60N60BCSG Quick Information

Product Type: MOSFET
Canonical Name: APT60N60BCSG N-Channel Power MOSFET
Subcategory: N-Channel

APT60N60BCSG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

APT60N60BCSG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

APT60N60BCSG Features

  • Handles 600V drain-to-source voltage.
  • Supports 60A continuous drain current.
  • Maximum power dissipation of 431W.
  • Low on-resistance of 45mΩ.
  • TO-247 through-hole package.

APT60N60BCSG Applications

  • Suitable for high-voltage power switching applications.
  • Used in motor control and inverter circuits.
  • Ideal for high-power supply regulation.
  • Applicable in demanding power management environments.

APT60N60BCSG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the APT60N60BCSG?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the APT60N60BCSG?

The continuous drain current (Id) at 25°C is 60A.

What is the maximum power dissipation for the APT60N60BCSG?

The maximum power dissipation is 431W (Tc).

What is the on-resistance of the APT60N60BCSG at specified conditions?

The maximum on-resistance (Rds On) is 45mΩ at 44A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to +150°C.

What type of MOSFET is the APT60N60BCSG?

It is an N-channel MOSFET.

What package is the APT60N60BCSG supplied in?

It is supplied in a TO-247 package with through-hole mounting.

Home
Account

Categories