| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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410 pcs
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410 pcs | On Request | 25 | On Request | On Request | On Request | On Request | On Request |
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The APT60N60BCSG is an N-channel power MOSFET manufactured by Microchip Technology. This component is engineered to handle demanding power applications, offering a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 60A at 25°C.
With a maximum power dissipation of 431W (Tc) and a low on-resistance of 45mΩ at 44A and 10V, the APT60N60BCSG is suitable for high-efficiency power switching and management tasks. Its metal-oxide technology ensures robust performance.
The device is housed in a standard TO-247-3 package, utilizing through-hole mounting for enhanced thermal management. The operating temperature range is from -55°C to +150°C (TJ), making it resilient in various environmental conditions.
Key electrical parameters include a gate threshold voltage (Vgs(th)) of 3.9V @ 3mA, a gate charge (Qg) of 190nC @ 10V, and a maximum gate-source voltage (Vgs) of ±30V. Input capacitance (Ciss) is rated at 7200pF @ 25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current (Id) at 25°C is 60A.
The maximum power dissipation is 431W (Tc).
The maximum on-resistance (Rds On) is 45mΩ at 44A and 10V.
The operating temperature range is -55°C to +150°C.
It is an N-channel MOSFET.
It is supplied in a TO-247 package with through-hole mounting.