| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT6038BLLG is an N-Channel MOSFET from Microchip Technology. It features a drain-source voltage rating of 600V and a continuous drain current of 17A at case temperature. The device has a maximum on-resistance of 380mOhm at 8.5A drain current and 10V gate-source voltage. Gate charge is 43nC at 10V, and input capacitance is 1850pF at 25V drain-source voltage. The threshold voltage is 5V at 1mA drain current. This MOSFET uses Metal Oxide technology and is packaged in a TO-247-3 through-hole package, suitable for high-power applications.
| Qty | Low | High |
|---|---|---|
| 60+ | $10.30 | $10.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3 through-hole package.
RoHS3 compliant (unverified).
17A at case temperature.
43nC at 10V gate-source voltage.
380mOhm at 8.5A drain current and 10V gate voltage.
1850pF at 25V drain-source voltage.