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APT6030BN APT6030BN is an N-Channel power MOSFET from Microsemi with a drain-source voltage of 600V and continuous drain current of 23A. It is housed in a through-hole TO-247AD package.
Mfr Part #:

APT6030BN

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
APT6030BN is an N-Channel power MOSFET from Microsemi with a drain-source voltage of 600V and continuous drain current of 23A. It is housed in a through-hole TO-247AD package.
✓ Total Stock: 4,000 pcs

APT6030BN Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
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APT6030BN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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APT6030BN Description

Short technical summary and product information.

The APT6030BN is an N-Channel enhancement-mode power MOSFET manufactured by Microsemi Corporation. It features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 23A at case temperature Tc. The device has a maximum on-resistance (Rds(on)) of 300mOhm at Vgs=10V and Id=11.5A, making it suitable for high-voltage switching applications.

 

Gate drive is specified at 10V, with a maximum gate threshold voltage of 4V at Id=1mA. The total gate charge (Qg) is 210nC at Vgs=10V, and input capacitance (Ciss) is 3500pF at Vds=25V. Maximum power dissipation is 360W at Tc, and the device can operate over a junction temperature range of -55°C to 150°C.

 

The APT6030BN is supplied in a TO-247-3 package (TO-247AD) with through-hole mounting, suitable for power circuit boards requiring high thermal and electrical performance.

APT6030BN Quick Information

Product Type: Power MOSFET
Series: POWER MOS IV
Canonical Name: APT6030BN N-Channel Power MOSFET
Subcategory: Single MOSFET

APT6030BN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

APT6030BN Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rated at 23A.
  • Low on-resistance of 300mOhm maximum.
  • Through-hole TO-247AD package for easy mounting.
  • Operating temperature range from -55°C to 150°C.

APT6030BN Applications

  • High-voltage DC-DC converters and inverters.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive circuits.
  • Power factor correction (PFC) stages.
  • Uninterruptible power supply (UPS) systems.

APT6030BN FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the APT6030BN?

The drain-to-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 23A at case temperature Tc.

What is the on-resistance (Rds(on)) of the APT6030BN?

The maximum on-resistance is 300mOhm at Vgs=10V and Id=11.5A.

What package type does the APT6030BN use?

The APT6030BN is supplied in a TO-247-3 package (TO-247AD) with through-hole mounting.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the APT6030BN RoHS compliant?

The part is marked as RoHS3 Compliant, but this status is unverified.

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