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APT55M50JFLL N-Channel enhancement mode power MOSFET, 550V drain-source, 77A continuous current, 50mOhm max on-resistance, in SOT-227 ISOTOP package.
Mfr Part #:

APT55M50JFLL

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
N-Channel enhancement mode power MOSFET, 550V drain-source, 77A continuous current, 50mOhm max on-resistance, in SOT-227 ISOTOP package.
✓ Total Stock: 2,568 pcs
$ Price Range: $47.13

APT55M50JFLL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,568 pcs
On Request
2568 pcs On Request 1 On Request On Request On Request On Request On Request
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APT55M50JFLL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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APT55M50JFLL Description

Short technical summary and product information.

The APT55M50JFLL is an N-Channel enhancement mode power MOSFET from Microsemi Corporation's Power MOS 7 series. It is rated for a drain-source voltage of 550V and a continuous drain current of 77A at 25°C case temperature. The device features a low drain-source on-state resistance of 50mOhm maximum (at 38.5A, VGS=10V) and a total gate charge of 265nC. It is designed for high efficiency power conversion applications.

 

The MOSFET is housed in the SOT-227 (ISOTOP) package, which offers low thermal resistance and high power dissipation capability — up to 694W. It operates over a junction temperature range of -55°C to 150°C. The device includes a fast recovery body diode and exhibits low input capacitance (12400pF) and low gate charge, enabling fast switching and reduced switching losses. Typical applications include switch mode power supplies, uninterruptible power supplies, motor drives, and induction heating. The device is UL recognized and suitable for demanding power switching circuits.

APT55M50JFLL Quick Information

Product Type: Power MOSFET
Canonical Name: APT55M50JFLL N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

APT55M50JFLL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

APT55M50JFLL Estimated Pricing

Qty Low High
10+ $47.13 $47.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

APT55M50JFLL Features

  • 550V drain-source breakdown voltage.
  • 77A continuous drain current rating.
  • Low 50mOhm on-state resistance.
  • SOT-227 ISOTOP power package.
  • Fast recovery body diode included.

APT55M50JFLL Applications

  • High voltage DC-DC converters.
  • Switch mode power supplies.
  • Motor drive inverter stages.
  • Uninterruptible power supplies.
  • Induction heating equipment.

APT55M50JFLL FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The maximum drain-source voltage (BVDSS) is 550V.

What is the continuous drain current rating?

The continuous drain current is 77A at a case temperature of 25°C.

What is the on-resistance?

The maximum on-resistance is 50mOhm at a drain current of 38.5A and a gate-source voltage of 10V.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What package is this MOSFET available in?

It is available in the SOT-227 (ISOTOP) package.

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