| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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120 pcs
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120 pcs | On Request | 25 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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| Power Dissipation |
The Microchip Technology APT50GF120B2RG is a high-performance Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) suitable for demanding power applications. This component features a robust 1200V collector-emitter voltage rating and a continuous collector current capability of 135A, with a pulsed current rating of 150A.
Key electrical characteristics include a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 50A collector current, contributing to efficient power dissipation of up to 781W. The device exhibits typical switching times with a turn-on delay of 25ns and a turn-off delay of 260ns at 25°C, complemented by switching energies of 3.6mJ (on) and 2.64mJ (off) under specified test conditions.
Packaged in a TO-247-3 Variant for through-hole mounting, the APT50GF120B2RG operates reliably within a wide temperature range of -55°C to 150°C (TJ). Its design makes it well-suited for applications such as power factor correction, industrial motor control, and electric vehicle powertrains.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 1200V.
The continuous collector current capability is 135A.
The typical on-state voltage is 3V at 15V gate-emitter voltage and 50A collector current.
The operating temperature range is -55°C to 150°C.
It is housed in a TO-247-3 Variant package.