| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,254 pcs
|
3254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The APT5025BN is an N-Channel enhancement mode power MOSFET designed for high voltage applications. It offers a drain-source voltage of 500V and a continuous drain current of 23A at 25°C case temperature. The device features a maximum drain-source on-resistance of 250 mOhm at Vgs=10V and Id=11.5A. It is built using Microsemi's POWER MOS IV technology. The MOSFET is capable of handling up to 310W of power dissipation at 25°C case temperature. It includes a body diode with a forward voltage of 1.3V and reverse recovery time of 320ns typical. The device is packaged in a through-hole TO-247-3 package (TO-247AD). It operates over a junction temperature range of -55°C to 150°C. Typical applications include switching power supplies, motor controls, and inverters.
500V.
TO-247-3 (TO-247AD).
-55°C to 150°C junction temperature.
RoHS3 Compliant (unverified).
23A at Tc=25°C.
250 mOhm maximum at Vgs=10V, Id=11.5A.
2V to 4V at Id=1mA.