| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The APT5022BNG is an N-Channel enhancement mode power MOSFET designed for high voltage switching applications. It has a drain-source voltage rating of 500V and a continuous drain current of 27A at 25°C case temperature. The device features a maximum on-resistance of 220mΩ at VGS=10V and ID=13.5A. It is built using Microsemi's POWER MOS IV technology. The MOSFET offers fast switching with typical turn-on delay of 38ns and rise time of 86ns. It is suitable for applications requiring high efficiency and reliability. The device is packaged in a through-hole TO-247-3 package (TO-247AD) and can operate over a junction temperature range of -55°C to 150°C. The maximum power dissipation is 360W at 25°C case temperature. The device also includes an integrated body diode with a forward voltage of 1.3V and reverse recovery time of 430ns.
The maximum drain-source voltage (Vdss) is 500V.
It is available in a through-hole TO-247-3 package (supplier device package TO-247AD).
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant but is unverified.
The continuous drain current is 27A at TC=25°C.
The maximum drain-source on-state resistance is 220mΩ at VGS=10V and ID=13.5A.
The maximum total gate charge is 210nC at VGS=10V.