| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,266 pcs
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2266 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The APT5020BN is an N-Channel enhancement mode power MOSFET designed for high-voltage switching applications. It is part of Microchip Technology's POWER MOS IV series and features a drain-source voltage rating of 500V and a continuous drain current of 28A at Tc=25°C.
The device offers a low drain-source on-resistance of 200mΩ (maximum) at VGS=10V and ID=14A, and a gate threshold voltage of 4V (maximum). It can dissipate up to 360W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C. The MOSFET also features a total gate charge of 210nC (maximum) and input capacitance of 3500pF.
The APT5020BN is available in a TO-247-3 through-hole package with a supplier device package of TO-247AD. It is suitable for power conversion, motor control, and other high-voltage switching circuits requiring robust thermal performance and low conduction losses.
The drain-source voltage rating is 500V.
The package is TO-247-3 (through-hole) with supplier device package TO-247AD.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, but this status is unverified.
The continuous drain current is 28A at Tc=25°C.
The maximum on-resistance is 200mΩ at VGS=10V and ID=14A.
The maximum gate threshold voltage is 4V at ID=1mA.