| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The APT5018BLLG is an N-Channel enhancement mode power MOSFET from Microchip Technology's Power MOS 7 series, designed for low conduction and switching losses. It features a drain-source breakdown voltage of 500V and a continuous drain current of 27A at 25°C case temperature. The maximum drain-source on-resistance is 180mOhm at Vgs=10V and Id=13.5A, ensuring high efficiency in power applications.
Gate charge characteristics include a total gate charge of 58nC and a Miller charge of 31nC, enabling fast switching with typical turn-on delay of 9ns and turn-off delay of 18ns. Output capacitance is 546pF, and reverse transfer capacitance is 38pF, contributing to reduced switching losses. The device is rated for repetitive avalanche energy up to 30mJ and single pulse avalanche energy of 1210mJ.
The MOSFET is housed in a TO-247-3 through-hole package (supplier device package TO-247 [B]) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 300W at 25°C case temperature, with a linear derating factor of 2.4W/°C. The device is sensitive to electrostatic discharge and requires proper handling.
| Qty | Low | High |
|---|---|---|
| 60+ | $10.25 | $10.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V minimum at Vgs=0V, Id=250µA.
27A maximum at case temperature 25°C.
180mOhm maximum at Vgs=10V, Id=13.5A.
-55°C to 150°C junction temperature.
TO-247-3 through-hole package.
Yes, RoHS3 compliant, but this status is unverified.
3V to 5V at Vds=Vgs, Id=1mA.