| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,256 pcs
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2256 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT5015BVRG is an N-Channel MOSFET from Microchip Technology, designed for high-voltage power switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 32A, with a maximum on-resistance of 150mΩ at a gate-source voltage of 10V and drain current of 500mA. The device has a maximum gate charge of 300nC and input capacitance of 5280pF, supporting efficient gate drive design. The threshold voltage is 4V maximum at 1mA drain current.
Packaged in a TO-247-3 through-hole case, the APT5015BVRG is suitable for through-hole mounting on printed circuit boards. The supplier device package is TO-247 [B]. This MOSFET is claimed to be RoHS3 compliant, though this has not been independently verified. The part is REACH unaffected according to available data.
Typical applications include high-voltage switching power supplies, inverters, motor drives, and other power conversion circuits where high efficiency and reliability are required. The absence of a linked datasheet limits detailed thermal and electrical characterization, so design engineers should obtain the official datasheet from Microchip Technology for complete specifications.
| Qty | Low | High |
|---|---|---|
| 50+ | $12.89 | $12.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500V.
It comes in a TO-247-3 through-hole package.
The continuous drain current is 32A at case temperature (Tc).
The maximum on-resistance is 150mΩ at Vgs = 10V and Id = 500mA.
The maximum gate charge is 300nC at Vgs = 10V.