| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,654 pcs
|
2654 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT5010B2VRG is an N-Channel enhancement-mode MOSFET manufactured by Microchip Technology. It is designed for high-voltage switching applications requiring a drain-source voltage rating of 500V and a continuous drain current of 47A (at Tc). The device features a maximum on-resistance of 100 mΩ at 500mA gate drive (Vgs=10V), ensuring efficient power handling.
Key electrical characteristics include a maximum input capacitance of 8900 pF at Vds=25V and a maximum gate charge of 470 nC at Vgs=10V. The gate threshold voltage is 4V maximum at Id=2.5mA. These parameters make the MOSFET suitable for moderate-frequency switching in power supplies and motor drives.
The device is housed in a through-hole TO-247-3 variant package (T-MAX™ [B2]), which provides excellent thermal performance and mechanical robustness. It is listed as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified. The part is intended for use in industrial and commercial power conversion systems.
| Qty | Low | High |
|---|---|---|
| 30+ | $18.42 | $18.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
47A at Tc.
100 mΩ at 500mA, 10V.
470 nC at 10V.
TO-247-3 variant (T-MAX™).
It is listed as RoHS3 Compliant, but this is unverified.
4V max at 2.5mA.