| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,544 pcs
|
2544 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This is a high-voltage N-Channel enhancement mode power MOSFET from Microsemi, part of the Power MOS V® series. It features a drain-source voltage of 400V and continuous drain current of 93A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 35 mΩ at Vgs=10V and Id=46.5A, and a total gate charge of 1065 nC. The device is avalanche energy rated with single pulse avalanche energy of 3600 mJ and repetitive avalanche energy of 50 mJ.
The MOSFET is housed in a SOT-227-4 miniBLOC package (ISOTOP®) designed for chassis mount installation. It offers a power dissipation of 700W at 25°C case temperature with a linear derating factor of 5.6 W/°C. Operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 10+ | $49.74 | $49.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V maximum.
SOT-227-4 miniBLOC (ISOTOP®) for chassis mount.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant (unverified).
93A.
35 mΩ maximum at Vgs=10V, Id=46.5A.
1065 nC maximum at Vgs=10V.