| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The APT38M50J is an N-Channel MOSFET from Microchip Technology designed for high-power applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 38A at case temperature (Tc). The device can dissipate up to 357W at Tc. The on-resistance is typically 100mOhm at 28A drain current and 10V gate drive. Gate charge is 220nC at 10V, and input capacitance is 8800pF at 25V drain-source voltage.
The MOSFET is housed in a SOT-227-4 (miniBLOC) package with a supplier device package of ISOTOP. It is designed for chassis mount installation, providing robust thermal management. The operating junction temperature range is -55°C to 150°C, suitable for a wide range of environmental conditions.
This component is suitable for applications requiring high voltage and high current handling, such as power supplies, inverters, and motor drives. The technology is standard MOSFET (Metal Oxide). The gate threshold voltage is 5V maximum at 2.5mA, and the recommended drive voltage for optimal Rds(on) is 10V.
| Qty | Low | High |
|---|---|---|
| 20+ | $26.10 | $26.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The package is SOT-227-4 (miniBLOC) with ISOTOP supplier device package, chassis mount.
The operating temperature range is -55°C to 150°C (junction).
The component is listed as RoHS3 compliant, but this is unverified (low confidence).
The maximum gate threshold voltage is 5V at 2.5mA drain current.
The maximum on-resistance is 100mOhm at 28A drain current and 10V gate drive.
The maximum gate charge is 220nC at 10V gate-source voltage.