| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,157 pcs
|
2157 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The APT34M120J is a high-voltage N-Channel MOSFET from Microchip Technology, utilizing Power MOS 8 technology. It features a minimum drain-source breakdown voltage of 1200V and a continuous drain current of 35A at 25°C (22A at 100°C). The maximum drain-source on-resistance is 0.29Ω at Vgs=10V. The device offers low gate charge (560 nC maximum) and ultra-low reverse transfer capacitance (215 pF typical), enabling fast switching with reduced EMI. With a high single pulse avalanche energy rating of 2700 mJ, it is suitable for robust applications. The MOSFET is rated for 960W power dissipation at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. It comes in a SOT-227-4 (miniBLOC) chassis mount package with 2500V isolation voltage. The device is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 10+ | $61.34 | $61.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V (minimum).
SOT-227-4 (miniBLOC) chassis mount package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant per datasheet.
22A continuous at Tc=100°C.
560 nC maximum at Vgs=10V.
2700 mJ single pulse.