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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current - Average Rectified (Io) | |
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The APT30SCD65B is a 650V, 46A Silicon Carbide (SiC) Schottky diode manufactured by Microsemi Corporation. It utilizes SiC Schottky technology, offering zero reverse recovery time (trr = 0 ns) which enables high-frequency switching with minimal losses. The diode has a maximum forward voltage of 1.8V at 30A forward current and a typical junction capacitance of 945 pF at 1V, 1MHz.
This diode is designed for through-hole mounting in a TO-247-2 package, with an operating junction temperature range of -55°C to 150°C. The SiC Schottky construction provides high efficiency in power conversion applications, with no reverse recovery current to cause switching losses. The device is suitable for power factor correction, switch-mode power supplies, and motor drive circuits.
RoHS compliance is indicated as RoHS3 Compliant, and the MSL is rated at Level 1 (unlimited). However, these compliance statuses are unverified and should be treated as low confidence. The part is available from distributors with a cross-reference to Digi-Key part number 150-APT30SCD65B-ND.
The maximum DC reverse voltage is 650 V.
The average rectified current is 46 A.
The maximum forward voltage is 1.8 V at 30 A forward current.
The reverse recovery time is 0 ns, indicating no recovery time (SiC Schottky).
The diode is through-hole mounted in a TO-247-2 package, with supplier device package TO-247.
The junction operating temperature range is -55°C to 150°C.
The typical junction capacitance is 945 pF at 1V, 1MHz.