| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13 pcs
|
13 pcs | On Request | 5 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Average Rectified (Io) (per Diode) | |
| Current - Reverse Leakage @ Vr | |
| Diode Configuration | |
| Mounting Type | |
| Package / Case | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| Voltage - Forward (Vf) (Max) @ If |
The APT2X60DC120J is a Silicon Carbide (SiC) Schottky diode module from Microsemi Corporation. It features two independent diodes configured as a dual rectifier array, offering zero reverse recovery time (0 ns) for high efficiency switching applications. This module is rated for a maximum DC reverse voltage of 1200V and can handle an average rectified current of 60A per diode. The forward voltage drop is 1.8V maximum at 60A, and the reverse leakage current is 1.2mA at 1200V.
With its SiC Schottky technology, this diode module provides no recovery time, enabling high-frequency operation with minimal switching losses. The chassis mount design and SOT-227 (miniBLOC) package allow for easy mounting on heatsinks, making it suitable for power conversion systems such as inverters, power supplies, and motor drives. The dual independent configuration offers flexibility for various circuit topologies.
This module is designed for demanding applications requiring high voltage and high current handling with fast switching. The SiC material ensures reliability and efficiency in harsh environments. The package is standard SOT-227, which is commonly used in high-power modules.
1200 V.
60 A.
1.8 V maximum.
0 ns.
SOT-227-4, miniBLOC.
Silicon Carbide (SiC) Schottky.
Two independent diodes.