| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,626 pcs
|
3626 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
| Industrial Grade | |
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| Supplier Device Package | |
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| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
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The APT25GP120BDQ1G is a 1200V, 69A Power MOS 7 punch-through (PT) IGBT from Microchip Technology, designed for high-efficiency power switching applications. It integrates a co-packaged anti-parallel DQ diode for soft recovery and reduced EMI.
Key electrical specifications include a maximum collector-emitter voltage of 1200V, continuous collector current of 69A at 25°C (33A at 110°C), and a pulsed current capability of 90A. The typical collector-emitter saturation voltage is 3.3V at 25A and 25°C, with a gate threshold voltage range of 3V to 6V. The device offers a gate charge of 110nC and switching energies of 500µJ (on) and 440µJ (off) under test conditions of 600V and 25A.
The IGBT is housed in a TO-247-3 through-hole package with a junction-to-case thermal resistance of 0.21°C/W (typ) for the IGBT and 0.81°C/W for the diode. It operates over a junction temperature range of -55°C to 150°C and is RoHS3 compliant. The device is suitable for high-frequency applications up to 50 kHz.
| Qty | Low | High |
|---|---|---|
| 50+ | $11.59 | $11.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
TO-247-3.
-55°C to 150°C (junction).
Yes, RoHS3 compliant.
110 nC.
500 µJ (on) and 440 µJ (off) at 600V, 25A.
3.3 V at 25A, 15V gate drive, 25°C.