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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 1424+1423+ | On Request | On Request |
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The APT20SCD65K is a Silicon Carbide (SiC) Schottky barrier diode from Microsemi. It is rated for 650V and supports an average rectified current of 32A. The diode offers a typical forward voltage of 1.8V at 20A and a zero reverse recovery time (0 ns), which minimizes switching losses in high-frequency power circuits.
The device operates over a temperature range of -55°C to 150°C and has a typical capacitance of 680 pF at 100 mV and 1 MHz. The no-recovery-time specification for currents above 500 mA makes it well suited for fast switching applications.
The diode is housed in a TO-220-2 through-hole package, which facilitates mounting to a heatsink for thermal management. It is listed as RoHS3 compliant, although this status is unverified. This component is intended for use in power conversion and rectification circuits requiring high efficiency and reliable switching.
The average rectified current is 32 A.
The typical forward voltage is 1.8 V at a forward current of 20 A.
The reverse recovery time is 0 ns, indicating no recovery time for currents above 500 mA.
The diode is available in a TO-220-2 through-hole package.
-55°C to 150°C.
Silicon Carbide (SiC) Schottky barrier technology.
Typical capacitance is 680 pF at 100 mV and 1 MHz.