| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The APT20M38BVRG is an N-Channel enhancement-mode MOSFET designed for high-efficiency power switching applications. It is built using MOSFET (Metal Oxide) technology and offers a drain-to-source breakdown voltage of 200V with a continuous drain current rating of 67A at Tc.
Key electrical characteristics include a maximum on-resistance of 38mOhm at Vgs=10V and Id=500mA, a gate threshold voltage of 4V at Id=1mA, and a maximum gate charge of 225nC at Vgs=10V. The device also features an input capacitance of 6120pF at Vds=25V and a maximum power dissipation of 370W at Tc.
The APT20M38BVRG is supplied in a through-hole TO-247-3 package, suitable for mounting on heatsinks in power conversion circuits. It operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.29 | $13.29 |
| 100+ | $10.79 | $10.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 67A at Tc.
The maximum on-resistance is 38mOhm at Vgs=10V and Id=500mA.
The APT20M38BVRG is supplied in a TO-247-3 through-hole package.
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.