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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The APT13GP120BDQ1G is a Punch-Through (PT) IGBT from Microchip Technology. It features a collector-emitter voltage of 1200V, a collector current of 41A, and a power dissipation of 250W. The collector-emitter saturation voltage is typically 3.9V at Vge=15V and Ic=13A. The gate charge is 55nC, and switching energies are 115µJ (turn-on) and 165µJ (turn-off) under test conditions of 600V, 13A, 5 Ohm, and 15V. Turn-on delay time is 9ns and turn-off delay time is 28ns. The device uses a standard input type and is mounted via through-hole in a TO-247-3 package. The operating junction temperature range is -55°C to 150°C. This IGBT is suitable for applications requiring high voltage and current handling in switching power supplies, motor drives, and other power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 80+ | $6.96 | $6.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V collector-emitter voltage.
TO-247-3 through-hole.
-55°C to 150°C junction temperature.
RoHS3 Compliant, but unverified.
55nC.
Turn-on 115µJ, turn-off 165µJ at 600V, 13A, 5 Ohm, 15V.
41A.