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APT1204R7KFLLG 1200V, 3.5A N-Channel Power MOSFET in TO-220 package. Low on-resistance of 4.7 Ohm and fast switching.
Mfr Part #:

APT1204R7KFLLG

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
1200V, 3.5A N-Channel Power MOSFET in TO-220 package. Low on-resistance of 4.7 Ohm and fast switching.
✓ Total Stock: 2,541 pcs

APT1204R7KFLLG Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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2,541 pcs
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2541 pcs On Request 1 On Request On Request On Request On Request On Request
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APT1204R7KFLLG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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APT1204R7KFLLG Description

Short technical summary and product information.

The APT1204R7KFLLG is a high-voltage N-Channel Power MOSFET from Microsemi, part of the Power MOS 7 family. It is designed for efficient power conversion with a drain-source breakdown voltage of 1200V and continuous drain current of 3.5A at 25°C case temperature. The device features a low on-resistance of 4.7 Ohm maximum at 10V gate drive, reducing conduction losses.

 

Key electrical characteristics include a typical gate threshold voltage of 5V, input capacitance of 715 pF, and total gate charge of 31 nC, enabling fast switching. The MOSFET includes a fast recovery body diode with reverse recovery time of 250 ns.

 

Packaged in a TO-220-3 through-hole package, the device offers a maximum power dissipation of 135W with a junction-to-case thermal resistance of 0.9°C/W. The operating junction temperature range is -55°C to 150°C.

 

This MOSFET is suitable for high voltage switching applications such as power supplies and inverters.

APT1204R7KFLLG Quick Information

Product Type: MOSFET
Series: Power MOS 7
Canonical Name: N-Channel 1200V 3.5A MOSFET in TO-220 package
Subcategory: N-Channel MOSFET

APT1204R7KFLLG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

APT1204R7KFLLG Features

  • 1200V drain-source breakdown voltage.
  • 3.5A continuous drain current rating.
  • 4.7 Ohm low on-resistance at 10V.
  • TO-220 through-hole package.
  • Fast recovery body diode included.

APT1204R7KFLLG Applications

  • High voltage power conversion circuits.
  • Switching power supplies.
  • Motor control inverters.

APT1204R7KFLLG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the APT1204R7KFLLG?

The drain-source breakdown voltage is 1200V minimum at ID = 250 µA, VGS = 0 V.

What is the continuous drain current rating?

The continuous drain current is 3.5A maximum at case temperature 25°C.

What is the on-resistance of this MOSFET?

The drain-source on-resistance is 4.7 Ohm maximum at VGS = 10 V, ID = 1.75 A.

What is the package type of the APT1204R7KFLLG?

The device is packaged in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the APT1204R7KFLLG RoHS compliant?

RoHS3 compliant (unverified, low confidence).

What is the total gate charge?

The total gate charge is 31 nC typical at VGS = 10 V.

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