APT11GP60BDQBG The APT11GP60BDQBG is a 600V, 41A Punch Through IGBT from Microsemi Corporation. It features low conduction loss and ultrafast tail current shutoff, housed in a TO-247-3 through-hole package.
Mfr Part #:

APT11GP60BDQBG

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The APT11GP60BDQBG is a 600V, 41A Punch Through IGBT from Microsemi Corporation. It features low conduction loss and ultrafast tail current shutoff, housed in a TO-247-3 through-hole package.
✓ Total Stock: 2,254 pcs
$ Price Range: $3.73

APT11GP60BDQBG Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,254 pcs
2254 pcs On Request 1 On Request On Request On Request On Request On Request

APT11GP60BDQBG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Capacitance
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

APT11GP60BDQBG Description

Short technical summary and product information.

The APT11GP60BDQBG is a Punch Through (PT) IGBT designed for high-frequency switching applications. It offers a collector-emitter voltage rating of 600V and continuous collector current of 41A at 25°C (20A at 100°C). The device is optimized for low conduction loss and features low gate charge.

 

Electrical characteristics include a gate threshold voltage range of 3V to 6V, typical collector-emitter on-voltage of 2.2V at 25°C and 2.1V at 125°C. Switching performance is characterized by turn-on delay of 7ns typ, rise time 9ns typ, turn-off delay 29ns typ, and fall time 46ns typ. Switching energies are 46µJ turn-on and 90µJ turn-off. Input capacitance is 1210pF, output capacitance 110pF, and reverse transfer capacitance 6pF.

 

Thermal characteristics include total power dissipation of 187W, junction-to-case thermal resistance of 0.67°C/W for the IGBT and 2.7°C/W for the diode. The operating junction temperature range is -55°C to 150°C. The device is supplied in a TO-247-3 through-hole package.

 

Applications include high-frequency switchmode power supplies, motor drives, and other power conversion systems requiring high efficiency and fast switching.

APT11GP60BDQBG Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Series: POWER MOS 7
Canonical Name: APT11GP60BDQBG IGBT
Subcategory: Single IGBT

APT11GP60BDQBG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

APT11GP60BDQBG Estimated Pricing

Qty Low High
60+ $3.73 $3.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

APT11GP60BDQBG Features

  • 600V collector-emitter voltage rating.
  • 41A continuous collector current at 25°C.
  • Low typical Vce(on) of 2.2V at 25°C.
  • Fast switching with 46µJ turn-on energy.
  • TO-247-3 through-hole package.

APT11GP60BDQBG Applications

  • Ideal for high-frequency switchmode power supplies.
  • Used in motor drive inverter circuits.
  • Suitable for uninterruptible power supplies (UPS).
  • Applicable in welding and induction heating equipment.

APT11GP60BDQBG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the APT11GP60BDQBG?

The collector-emitter voltage (Vces) is 600V minimum.

What package does the APT11GP60BDQBG come in?

The device is supplied in a TO-247-3 through-hole package.

What is the operating temperature range of the APT11GP60BDQBG?

The operating junction temperature range is -55°C to 150°C.

Is the APT11GP60BDQBG RoHS compliant?

The device is listed as RoHS3 compliant, but this information is unverified and has low confidence.

What is the continuous collector current rating?

The continuous collector current is 41A at 25°C case temperature and 20A at 100°C.

What is the total power dissipation of the APT11GP60BDQBG?

The total power dissipation is 187W.

What is the gate threshold voltage range?

The gate threshold voltage is 3V minimum, 4.5V typical, and 6V maximum at Vce=Vge, Ic=1mA, Tj=25°C.

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