| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45 pcs
|
45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Average Rectified (Io) | |
| Current - Surge (Non-repetitive) | |
| Diode Configuration | |
| Forward Voltage (Vf) | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The APT10SCD65KCT is a silicon carbide (SiC) Schottky diode array manufactured by Microsemi Corporation. It contains one pair of diodes in a common cathode configuration, designed for high-efficiency power conversion. The device is rated for a maximum reverse voltage of 650V and an average rectified current of 10A. It can handle a non-repetitive surge current of 200A. The forward voltage is typically 1.8V at 10A forward current. As a SiC Schottky diode, it exhibits zero reverse recovery time (trr = 0 ns), enabling high-frequency operation with minimal switching losses. The operating temperature range is -55°C to 150°C. The device is housed in a TO-220-3 through-hole package, suitable for easy mounting on heatsinks. This diode array is ideal for applications requiring high efficiency and fast switching, such as power factor correction and switch-mode power supplies.
650V.
10A.
1.8V at 10A.
0 ns (zero recovery due to SiC Schottky technology).
TO-220-3 (through-hole).
200A non-repetitive surge current.
1 pair common cathode.