| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT10M25BVRG is an N-Channel MOSFET from Microchip Technology designed for high-power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 75A at case temperature. The maximum on-resistance is 25mOhm at 500mA and 10V gate drive, ensuring low conduction losses. The gate threshold voltage is 4V maximum, and the device offers a gate charge of 225nC at 10V. Input capacitance is 5160pF at 25V, supporting efficient switching performance.
This MOSFET is housed in a TO-247-3 through-hole package, suitable for robust mounting in power electronics assemblies. The package provides excellent thermal performance for high-current operation. Typical applications include power supplies, motor drives, inverters, and DC-DC converters where high efficiency and reliability are required.
With its 100V breakdown voltage and 75A current capability, the APT10M25BVRG is well-suited for medium-voltage power conversion circuits. The device's low on-resistance and moderate gate charge make it a practical choice for both hard-switching and resonant topologies.
| Qty | Low | High |
|---|---|---|
| 60+ | $9.89 | $9.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-247-3 through-hole package.
Yes, this component is RoHS3 compliant.
225 nC at 10V.
25 mOhm maximum at 500mA, 10V.
5160 pF at 25V.
4V maximum at 1mA.