| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT10M19SVRG is an N-Channel enhancement-mode MOSFET from Microchip Technology, designed for high-efficiency power switching applications. It features a 100V drain-source voltage rating and a continuous drain current of 75A, making it suitable for demanding power conversion circuits. The device offers a low on-resistance of 19mOhm maximum at 500mA and 10V gate drive, minimizing conduction losses.
With a maximum gate charge of 300nC at 10V and an input capacitance of 6120pF at 25V, the MOSFET provides good switching performance for medium-frequency applications. The gate threshold voltage is 4V maximum at 1mA, ensuring compatibility with standard logic-level gate drives.
The device is housed in a TO-268-3 (D3Pak) surface mount package, which offers a compact footprint with excellent thermal dissipation through the exposed pad. This package is suitable for automated assembly and space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.24 | $13.24 |
| 100+ | $10.75 | $10.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V.
75 A at Tc.
19 mOhm maximum at 500mA, 10V.
300 nC maximum at 10V.
6120 pF maximum at 25V.
TO-268-3 (D3Pak), surface mount.
Yes, RoHS3 compliant (unverified).