| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| FET Type | |
| Failure Rate | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The Microsemi Corporation APT10050LVRG is an N-Channel MOSFET belonging to the POWER MOS 8™ series. It is designed with Metal Oxide Semiconductor technology and offers a drain-to-source voltage (Vdss) of 500V.
Key electrical specifications include a continuous drain current (Id) of 24A at 25°C and a maximum on-resistance (Rds On) of 240mOhm at 11A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 1mA, and the maximum gate-source voltage is ±30V. Input capacitance (Ciss) is rated at a maximum of 3630 pF at 25V.
This MOSFET has a power dissipation rating of 335W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a surface mount D3Pak package (TO-268-3, D³Pak).
The APT10050LVRG is suitable for applications requiring high voltage and current handling capabilities in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 500 V.
The continuous drain current (Id) is 24 A (Tc).
The maximum on-resistance (Rds On) is 240 mOhm at 11A, 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is an N-Channel MOSFET using Metal Oxide technology.
It is supplied in a surface mount D3Pak package (TO-268-3, D³Pak).