| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT10045LFLLG is an N-channel power MOSFET manufactured by Microchip Technology. This discrete transistor uses metal-oxide semiconductor (MOSFET) technology and is designed for high-voltage switching applications. It offers a maximum drain-to-source voltage of 1000 V and a maximum drain current of 23 A at case temperature.
The device has a maximum drain-to-source on-resistance of 460 mΩ at a gate-source voltage of 10 V and drain current of 11.5 A. The total gate charge is 154 nC at Vgs = 10 V, and the input capacitance is 4350 pF at Vds = 25 V. The maximum gate threshold voltage is 5 V at a drain current of 2.5 mA, ensuring reasonable gate drive requirements.
The APT10045LFLLG is housed in a TO-264 package with through-hole mounting, compatible with TO-264-3 and TO-264AA outlines (supplier device package TO-264 [L]). This package is suited for high-power discrete designs with heat sinking. According to supplier data, the part is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 25+ | $27.12 | $27.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 1000 V.
The maximum drain current is 23 A at case temperature (Tc).
The maximum on-resistance is 460 mΩ at Vgs=10V and Id=11.5A.
The APT10045LFLLG comes in a TO-264-3/TO-264AA through-hole package, with supplier device package TO-264 [L].
The product is listed as RoHS3 compliant, though compliance is unverified.
The total gate charge is 154 nC at Vgs=10V.
The input capacitance is 4350 pF at Vds=25V.