| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The APT1003RSFLLG is an N-Channel enhancement-mode MOSFET manufactured by Microchip Technology. It features a drain-source voltage rating of 1000V and a continuous drain current of 4A at case temperature (Tc). The device has a maximum on-resistance of 3 Ohm at 2A drain current with 10V gate drive. Gate threshold voltage is 5V maximum at 1mA. Input capacitance is 694 pF at 25V drain-source bias, and maximum gate charge is 34 nC at 10V gate voltage. The MOSFET uses advanced MOSFET (Metal Oxide) technology. It is supplied in a surface-mount TO-268-3 package, also known as D3Pak (2 Leads + Tab) or TO-268AA, with the supplier device package designation D3 [S]. This device is suitable for high-voltage switching applications such as power supplies, inverters, and motor controls.
| Qty | Low | High |
|---|---|---|
| 50+ | $11.98 | $11.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 1000V.
The package is TO-268-3, D³Pak (2 Leads + Tab), TO-268AA.
The part is listed as RoHS3 compliant, but this is unverified and should be treated as low confidence.
The maximum gate threshold voltage is 5V at Id=1mA.
The maximum drain-source on-resistance is 3 Ohm at Id=2A, Vgs=10V.
The continuous drain current is 4A at case temperature (Tc).
The maximum input capacitance (Ciss) is 694 pF at Vds=25V.