| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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330 pcs
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330 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The APT1002RBNG is an N-Channel MOSFET manufactured by Microsemi Corporation. It is designed for high-voltage switching applications, with a drain-to-source voltage rating of 1000V and a continuous drain current of 8A at case temperature. The device features a maximum on-resistance of 1.6Ω at a gate drive of 10V and a drain current of 4A, enabling efficient power handling.
This MOSFET offers a maximum gate charge of 105nC at 10V and an input capacitance of 1800pF at 25V, which are important for estimating switching performance and gate drive requirements. The maximum gate threshold voltage is 4V at 1mA, and the gate-source voltage rating is ±30V. With a maximum power dissipation of 240W at case temperature, the device is suitable for high-power applications.
The APT1002RBNG is housed in a TO-247-3 package with a supplier device package of TO-247AD, designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding environments. This component is commonly used in power supplies, inverters, and other high-voltage switching circuits.
The drain-to-source voltage rating is 1000V.
The maximum drain current is 8A at case temperature.
The maximum on-resistance is 1.6Ω at a drain current of 4A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The APT1002RBNG is available in a TO-247-3 package with a supplier device package of TO-247AD.
The maximum power dissipation is 240W at case temperature.
The maximum gate threshold voltage is 4V at a drain current of 1mA.