APT1002RBNG APT1002RBNG is an N-Channel MOSFET from Microsemi with a 1000V drain-source voltage and 8A drain current. It features a low on-resistance of 1.6Ω and comes in a TO-247AD through-hole package.
Mfr Part #:

APT1002RBNG

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
APT1002RBNG is an N-Channel MOSFET from Microsemi with a 1000V drain-source voltage and 8A drain current. It features a low on-resistance of 1.6Ω and comes in a TO-247AD through-hole package.
✓ Total Stock: 330 pcs

APT1002RBNG Available from 1 distributor

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APT1002RBNG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

APT1002RBNG Description

Short technical summary and product information.

The APT1002RBNG is an N-Channel MOSFET manufactured by Microsemi Corporation. It is designed for high-voltage switching applications, with a drain-to-source voltage rating of 1000V and a continuous drain current of 8A at case temperature. The device features a maximum on-resistance of 1.6Ω at a gate drive of 10V and a drain current of 4A, enabling efficient power handling.

 

This MOSFET offers a maximum gate charge of 105nC at 10V and an input capacitance of 1800pF at 25V, which are important for estimating switching performance and gate drive requirements. The maximum gate threshold voltage is 4V at 1mA, and the gate-source voltage rating is ±30V. With a maximum power dissipation of 240W at case temperature, the device is suitable for high-power applications.

 

The APT1002RBNG is housed in a TO-247-3 package with a supplier device package of TO-247AD, designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding environments. This component is commonly used in power supplies, inverters, and other high-voltage switching circuits.

APT1002RBNG Quick Information

Product Type: MOSFET
Series: POWER MOS IV
Canonical Name: N-Channel MOSFET, 1000V, 8A, TO-247AD
Subcategory: Single N-Channel MOSFET

APT1002RBNG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

APT1002RBNG Features

  • N-Channel MOSFET with 1000V rating.
  • 8A continuous drain current capability.
  • Low on-resistance of 1.6Ω maximum.
  • TO-247AD through-hole package.
  • Operating temperature range -55°C to 150°C.

APT1002RBNG Applications

  • High-voltage power supply switching circuits.
  • Inverter and converter power stages.
  • Motor control and industrial drives.
  • Power factor correction circuits.

APT1002RBNG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the APT1002RBNG?

The drain-to-source voltage rating is 1000V.

What is the maximum drain current of the APT1002RBNG?

The maximum drain current is 8A at case temperature.

What is the on-resistance of the APT1002RBNG?

The maximum on-resistance is 1.6Ω at a drain current of 4A and gate-source voltage of 10V.

What is the operating temperature range of the APT1002RBNG?

The operating junction temperature range is -55°C to 150°C.

What package is the APT1002RBNG available in?

The APT1002RBNG is available in a TO-247-3 package with a supplier device package of TO-247AD.

What is the maximum power dissipation of the APT1002RBNG?

The maximum power dissipation is 240W at case temperature.

What is the gate threshold voltage of the APT1002RBNG?

The maximum gate threshold voltage is 4V at a drain current of 1mA.

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