| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Current (Iar) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Fall Time (tf) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Drain Charge (Qgd) | |
| Gate-Source Charge (Qgs) | |
| Gate-Source Leakage Current (IGSS) | |
| Gate-Source Voltage (Maximum @ Transient) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Temperature (Soldering) | |
| Linear Derating Factor | |
| Mounting Type | |
| Operating and Storage Temperature Range (Tj, TSTG) | |
| Output Capacitance (Coss) | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Repetitive Avalanche Energy (EAR) | |
| Reverse Transfer Capacitance (Crss) | |
| Rise Time (tr) | |
| Single Pulse Avalanche Energy (EAS) | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Total Power Dissipation (Pd) | |
| Turn-Off Delay Time (td(off)) | |
| Turn-On Delay Time (td(on)) | |
| Turn-off Switching Energy (Typical @ Vdd=667 V, Vgs=15 V, Id=38 A, Rg=3Ω, Tc=125 °C) | |
| Turn-off Switching Energy (Typical @ Vdd=667 V, Vgs=15 V, Id=38 A, Rg=3Ω, Tc=25 °C) | |
| Turn-on Switching Energy (Typical @ Vdd=667 V, Vgs=15 V, Id=38 A, Rg=3Ω, Tc=125 °C) | |
| Turn-on Switching Energy (Typical @ Vdd=667 V, Vgs=15 V, Id=38 A, Rg=3Ω, Tc=25 °C) | |
| Vgs(th) (Max) @ Id | |
| Zero-Gate-Voltage Drain Current (IDSS) | |
| gate_source_voltage (Maximum @ continuous) |
The APT10026JFLL from Microchip Technology is an N-Channel enhancement-mode power MOSFET built on Power MOS 7® technology. It is designed for high-voltage power switching applications, featuring a 1000V maximum drain-source voltage and a 30A continuous drain current at Tc=25°C. The device also supports a 120A pulsed drain current, making it suitable for demanding transient conditions. The maximum on-resistance is 280 mOhm at Vgs=10V and Id=15A, and the gate threshold voltage ranges from 3V to 5V.
The MOSFET offers low gate charge (267 nC maximum at Vgs=10V) and fast switching times, with typical turn-on delay of 17 ns, rise time of 8 ns, turn-off delay of 39 ns, and fall time of 9 ns. These characteristics help reduce switching losses in high-frequency power circuits. The device is rated for up to 595W power dissipation at Tc=25°C with a linear derating factor of 4.76 W/°C, and it operates over a junction temperature range of -55°C to 150°C.
The APT10026JFLL comes in a SOT-227-4 (miniBLOC) chassis-mount package, also known as ISOTOP®. This package provides robust thermal and electrical performance for industrial power electronics. The part is listed as RoHS3 compliant in existing records, though this status has not been independently verified.
| Qty | Low | High |
|---|---|---|
| 10+ | $99.39 | $99.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1000V.
It is available in a SOT-227-4 (miniBLOC) package, also known as ISOTOP, for chassis mounting.
The operating and storage junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant in existing records, though not independently verified.
The continuous drain current is 30A at Tc=25°C.
The maximum on-resistance is 280 mOhm at Vgs=10V, Id=15A, according to the datasheet.
The maximum power dissipation is 595W at Tc=25°C.